RESUMO
In this paper we discuss the development of a MEMS-based solid state atom source that can provide controllable atom deposition ranging over eight orders of magnitude, from ten atoms per square micron up to hundreds of atomic layers, on a target â¼1 mm away. Using a micron-scale silicon plate as a thermal evaporation source we demonstrate the deposition of indium, silver, gold, copper, iron, aluminum, lead and tin. Because of their small sizes and rapid thermal response times, pulse width modulation techniques are a powerful way to control the atomic flux. Pulsing the source with precise voltages and timing provides control in terms of when and how many atoms get deposited. By arranging many of these devices into an array, one has a multi-material, programmable solid state evaporation source. These micro atom sources are a complementary technology that can enhance the capability of a variety of nano-fabrication techniques.
RESUMO
Semiconductor fabs are large, complex industrial sites with costs for a single facility approaching $10B. In this paper we discuss the possibility of putting the entire functionality of such a fab onto a single silicon chip. We demonstrate a path forward where, for certain applications, especially at the nanometer scale, one can consider using a single chip approach for building devices with significant potential cost savings. In our approach, we build micro versions of the macro machines one typically finds in a fab, and integrating all the components together. We argue that the technology now exists to allow one to build a Fab on a Chip.