Quantized Ballistic Transport of Electrons and Electron Pairs in LaAlO3/SrTiO3 Nanowires.

SrTiO3-based heterointerfaces support quasi-two-dimensional (2D) electron systems that are analogous to III-V semiconductor heterostructures, but also possess superconducting, magnetic, spintronic, ferroelectric, and ferroelastic degrees of freedom. Despite these rich properties, the relatively low mobilities of 2D complex-oxide interfaces appear to preclude ballistic transport in 1D. Here we show that the 2D LaAlO3/SrTiO3 interface can support quantized ballistic transport of electrons and (nonsuperconducting) electron pairs within quasi-1D structures that are created using a well-established conductive atomic-force microscope (c-AFM) lithography technique. The nature of transport ranges from truly single-mode (1D) to three-dimensional (3D), depending on the applied magnetic field and gate voltage. Quantization of the lowest e2/ h plateau indicate a ballistic mean-free path lMF ∼ 20 µm, more than 2 orders of magnitude larger than for 2D LaAlO3/SrTiO3 heterostructures. Nonsuperconducting electron pairs are found to be stable in magnetic fields as high as B = 11 T and propagate ballistically with conductance quantized at 2 e2/ h. Theories of one-dimensional (1D) transport of interacting electron systems depend crucially on the sign of the electron-electron interaction, which may help explain the highly ballistic transport behavior. The 1D geometry yields new insights into the electronic structure of the LaAlO3/SrTiO3 system and offers a new platform for the study of strongly interacting 1D electronic systems.

Observation of Quantized and Partial Quantized Conductance in Polymer-Suspended Graphene Nanoplatelets.

Quantized conductance is observed at zero magnetic field and room temperature in metal-insulator-metal structures with graphene submicron-sized nanoplatelets embedded in a 3-hexylthiophene (P3HT) polymer layer. In devices with medium concentration of graphene platelets, integer multiples of G o = 2e (2)/h (=12.91 kΩ(-1)), and in some devices partially quantized including a series of with (n/7) × G o, steps are observed. Such an organic memory device exhibits reliable memory operation with an on/off ratio of more than 10. We attribute the quantized conductance to the existence of a 1-D electron waveguide along the conductive path. The partial quantized conductance results likely from imperfect transmission coefficient due to impedance mismatch of the first waveguide modes.