Defects in GaAs on Si studied with the positron-beam technique. | Phys Rev B Condens Matter;46(19): 12394-12401, 1992 Nov 15. | MEDLINE

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Defects in GaAs on Si studied with the positron-beam technique.

Soininen E; Mäkinen J; Hautojärvi P; Corbel C; Freundlich A; Grenet JC.

Phys Rev B Condens Matter ; 46(19): 12394-12401, 1992 Nov 15.

Article in En | MEDLINE | ID: mdl-10003155

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Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Rev B Condens Matter Year: 1992 Document type: Article Country of publication: United States

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Collection: 01-internacional Database: MEDLINE Language: En Journal: Phys Rev B Condens Matter Year: 1992 Document type: Article Country of publication: United States