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Growth mechanism of GaN nanowires: preferred nucleation site and effect of hydrogen.
Lim, Sung K; Crawford, Samuel; Gradecak, Silvija.
Affiliation
  • Lim SK; Department of Materials and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
Nanotechnology ; 21(34): 345604, 2010 Aug 27.
Article in En | MEDLINE | ID: mdl-20683137
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2010 Document type: Article Affiliation country: United States Country of publication: United kingdom
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2010 Document type: Article Affiliation country: United States Country of publication: United kingdom