Exciton properties in zincblende InGaN-GaN quantum wells under the effects of intense laser fields.
Nanoscale Res Lett
; 7(1): 492, 2012 Aug 31.
Article
in En
| MEDLINE
| ID: mdl-22937963
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Nanoscale Res Lett
Year:
2012
Document type:
Article
Affiliation country:
Colombia
Country of publication:
United States