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High-mobility and air-stable single-layer WS2 field-effect transistors sandwiched between chemical vapor deposition-grown hexagonal BN films.
Iqbal, M Waqas; Iqbal, M Zahir; Khan, M Farooq; Shehzad, M Arslan; Seo, Yongho; Park, Jong Hyun; Hwang, Chanyong; Eom, Jonghwa.
Affiliation
  • Iqbal MW; Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
  • Iqbal MZ; Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
  • Khan MF; Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
  • Shehzad MA; Faculty of Nanotechnology &Advanced Materials Engineering and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
  • Seo Y; Faculty of Nanotechnology &Advanced Materials Engineering and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
  • Park JH; Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764, Korea.
  • Hwang C; Center for Nanometrology, Korea Research Institute of Standards and Science, Daejeon 305-340, Korea.
  • Eom J; Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea.
Sci Rep ; 5: 10699, 2015 Jun 01.
Article in En | MEDLINE | ID: mdl-26030008
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2015 Document type: Article Country of publication: United kingdom
Fulltext
Add to My VHL
Print
XML
PubMed Links
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Sci Rep Year: 2015 Document type: Article Country of publication: United kingdom