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Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers.
Zhang, Wen; Fan, Zenghui; Shen, Ao; Dong, Chengyuan.
Affiliation
  • Zhang W; Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
  • Fan Z; Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
  • Shen A; Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
  • Dong C; Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Micromachines (Basel) ; 12(12)2021 Dec 12.
Article in En | MEDLINE | ID: mdl-34945401
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Micromachines (Basel) Year: 2021 Document type: Article Affiliation country: China Country of publication: Switzerland
Fulltext
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Micromachines (Basel) Year: 2021 Document type: Article Affiliation country: China Country of publication: Switzerland