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WSe2/WS2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention.
Siao, Ming-Deng; Gandhi, Ashish Chhaganlal; Sahoo, Anup Kumar; Wu, Yi-Chieh; Syu, Hong-Kai; Tsai, Meng-Yu; Tsai, Tsung-Han; Yang, Yueh-Chiang; Lin, Yen-Fu; Liu, Rai-Shung; Chiu, Po-Wen.
Affiliation
  • Siao MD; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Gandhi AC; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Sahoo AK; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Wu YC; Department of Chemistry, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Syu HK; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Tsai MY; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Tsai TH; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Yang YC; Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan.
  • Lin YF; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Liu RS; Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Chiu PW; Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan.
ACS Appl Mater Interfaces ; 14(2): 3467-3475, 2022 Jan 19.
Article in En | MEDLINE | ID: mdl-34995438

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2022 Document type: Article Affiliation country: Taiwan Country of publication: United States

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Appl Mater Interfaces Journal subject: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Year: 2022 Document type: Article Affiliation country: Taiwan Country of publication: United States