Your browser doesn't support javascript.
loading
Characteristics of Vertical Ga2O3 Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film.
Rama, Venkata Krishna Rao; Ranade, Ajinkya K; Desai, Pradeep; Todankar, Bhagyashri; Kalita, Golap; Suzuki, Hiroo; Tanemura, Masaki; Hayashi, Yasuhiko.
Affiliation
  • Rama VKR; Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita, Okayama 700-8530 Japan.
  • Ranade AK; Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-Cho, Showa-Ku, Nagoya 466-8555, Japan.
  • Desai P; Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-Cho, Showa-Ku, Nagoya 466-8555, Japan.
  • Todankar B; Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-Cho, Showa-Ku, Nagoya 466-8555, Japan.
  • Kalita G; Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-Cho, Showa-Ku, Nagoya 466-8555, Japan.
  • Suzuki H; Frontier Research Institute for Material Science, Nagoya Institute of Technology, Nagoya 466-8555, Japan.
  • Tanemura M; Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka, Kita, Okayama 700-8530 Japan.
  • Hayashi Y; Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-Cho, Showa-Ku, Nagoya 466-8555, Japan.
ACS Omega ; 7(30): 26021-26028, 2022 Aug 02.
Article in En | MEDLINE | ID: mdl-35936403
We present the device properties of a nickel (Ni)-gallium oxide (Ga2O3) Schottky junction with an interfacial hexagonal boron nitride (hBN) layer. A vertical Schottky junction with the configuration Ni/hBN/Ga2O3/In was created using a chemical vapor-deposited hBN film on a Ga2O3 substrate. The current-voltage characteristics of the Schottky junction were investigated with and without the hBN interfacial layer. We observed that the turn-on voltage for the forward current of the Schottky junction was significantly enhanced with the hBN interfacial film. Furthermore, the Schottky junction was analyzed under the illumination of deep ultraviolet light (254 nm), obtaining a photoresponsivity of 95.11 mA/W under an applied bias voltage (-7.2 V). The hBN interfacial layer for the Ga2O3-based Schottky junction can serve as a barrier layer to control the turn-on voltage and optimize the device properties for deep-UV photosensor applications. Furthermore, the demonstrated vertical heterojunction with an hBN layer has the potential to be significant for temperature management at the junction interface to develop reliable Ga2O3-based Schottky junction devices.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Omega Year: 2022 Document type: Article Country of publication: United States

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: ACS Omega Year: 2022 Document type: Article Country of publication: United States