Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate. | Nanomaterials (Basel);13(9)2023 May 06. | MEDLINE

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Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate.

Li, Shuai; Luo, Jun; Ye, Tianchun.

Affiliation

Li S; Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.
Luo J; University of Chinese Academy of Sciences, Beijing 100049, China.
Ye T; Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China.

Nanomaterials (Basel) ; 13(9)2023 May 06.

Article in En | MEDLINE | ID: mdl-37177114

Key words

4H-SiC; EDS; HRTEM; SIMS; STEM; interface states density; oxidation rate; phosphorus implantation

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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2023 Document type: Article Affiliation country: China Country of publication: Switzerland

Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanomaterials (Basel) Year: 2023 Document type: Article Affiliation country: China Country of publication: Switzerland