Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance.
ACS Nano
; 17(22): 22259-22267, 2023 Nov 28.
Article
in En
| MEDLINE
| ID: mdl-37823534
Full text:
1
Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
ACS Nano
Year:
2023
Document type:
Article
Affiliation country:
China