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25.71 %-Efficiency FACsPbI3 Perovskite Solar Cells Enabled by A Thiourea-based Isomer.
Li, Yong; Duan, Yuwei; Feng, Jiangshan; Sun, Yiqiao; Wang, Ke; Li, Hongxiang; Wang, Huaxin; Zang, Zhigang; Zhou, Hui; Xu, Dongfang; Wu, Meizi; Li, Yongzhe; Xie, Zhuang; Liu, Zexia; Huang, Jingyu; Yao, Yao; Peng, Qiang; Fan, Qunping; Yuan, Ningyi; Ding, Jianning; Liu, Shengzhong; Liu, Zhike.
Affiliation
  • Li Y; Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
  • Duan Y; Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
  • Feng J; College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu, 610059, China.
  • Sun Y; Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
  • Wang K; Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
  • Li H; Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), Chongqing University, Chongqing, 400044, China.
  • Wang H; College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China.
  • Zang Z; Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), Chongqing University, Chongqing, 400044, China.
  • Zhou H; Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), Chongqing University, Chongqing, 400044, China.
  • Xu D; Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
  • Wu M; Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
  • Li Y; Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
  • Xie Z; Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
  • Liu Z; College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu, 610059, China.
  • Huang J; College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu, 610059, China.
  • Yao Y; College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu, 610059, China.
  • Peng Q; College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu, 610059, China.
  • Fan Q; College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu, 610059, China.
  • Yuan N; State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Ding J; School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, 213164, China.
  • Liu S; School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, 213164, China.
  • Liu Z; Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China.
Angew Chem Int Ed Engl ; : e202410378, 2024 Aug 14.
Article in En | MEDLINE | ID: mdl-39143026
ABSTRACT
Various isomers have been developed to regulate the morphology and reduce defects in state-of-the-art perovskite solar cells (PSCs). To insight the structure-function-effect correlations for the isomerization of thiourea derivatives on the performance of the PSCs, we developed two thiourea derivatives [(3,5-dichlorophenyl)amino]thiourea (AT) and N-(3,5-dichlorophenyl)hydrazinecarbothioamide (HB). Supported by experimental and calculated results, it was found that AT can bind with undercoordinated Pb2+ defect through synergistic interaction between N1 and C=S group with a defect formation energy of 1.818 eV, which is much higher than that from the synergistic interaction between two -NH- groups in HB and perovskite (1.015 eV). Moreover, the stronger interaction between AT and Pb2+ regulates the crystallization process of perovskite film to obtain a high-quality perovskite film with high crystallinity, large grain size, and low defect density. Consequently, the AT-treated FACsPbI3 device engenders an efficiency of 25.71 % (certified as 24.66 %), which is greatly higher than control (23.74 %) and HB-treated FACsPbI3 devices (25.05 %). The resultant device exhibits a remarkable stability for maintaining 91.0 % and 95.2 % of its initial efficiency after aging 2000 h in air condition or tracking at maximum power point for 1000 h, respectively.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Angew Chem Int Ed Engl Year: 2024 Document type: Article Affiliation country: China Country of publication: Germany

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Angew Chem Int Ed Engl Year: 2024 Document type: Article Affiliation country: China Country of publication: Germany