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Repair Engineering of Crystal Structure in van der Waals Materials by Probe Electron Beam.
Wang, Nan; Wei, Shiyang; Deng, Xia; Wang, Tao; Zhang, Yaxing; Zhao, Xinrui; Hu, Wang; Zeng, Xue; Ye, Chuang; Mu, Xiaoke; Zhang, Junwei; Wang, Laiyuan; Zhang, Xixiang; Wang, Zhe; Zhang, Peng; Peng, Yong.
Affiliation
  • Wang N; School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, People's Republic of China.
  • Wei S; School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, People's Republic of China.
  • Deng X; School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, People's Republic of China.
  • Wang T; School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China.
  • Zhang Y; School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, People's Republic of China.
  • Zhao X; School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, People's Republic of China.
  • Hu W; School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, People's Republic of China.
  • Zeng X; School of Materials Science and Engineering, Lanzhou Jiaotong University, Lanzhou 730070, Gansu, China.
  • Ye C; School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, People's Republic of China.
  • Mu X; School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, People's Republic of China.
  • Zhang J; School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, People's Republic of China.
  • Wang L; School of Flexible Electronics (SoFE) and State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong 518107, China.
  • Zhang X; King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering (PSE) Division, Thuwal 23955-6900, Saudi Arabia.
  • Wang Z; School of Space Science and Physics, Shandong University, Weihai 264209, People's Republic of China.
  • Zhang P; School of Space Science and Physics, Shandong University, Weihai 264209, People's Republic of China.
  • Peng Y; School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, People's Republic of China.
Nano Lett ; 24(35): 11028-11035, 2024 Sep 04.
Article in En | MEDLINE | ID: mdl-39186253
ABSTRACT
The advancement of electronic technology has led to increasing research on performance and stability. Continuous electrical pulse stimulation can cause crystal structure changes, affecting performance and accelerating aging. Controlled repair of these defects is crucial. In this study, we investigated crystal structure changes in van der Waals (vdW) InSe crystals under continuous electric pulses by using electron beam lithography (EBL) and spherical aberration corrected transmission electron microscopy (Cs-TEM). Results show that electrical pulses induce amorphous regions in the InSe lattice, increasing the device resistance. We used Cs-STEM probe scanning for precise repair, abbreviated SPRT, to optimize device performance. SPRT is related to electric fields induced by the electron beam and can be applied to other 2D materials like α-In2Se3 and CrSe2, offering a potential approach to extend device lifespan.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett Year: 2024 Document type: Article Country of publication: United States
Fulltext
Add to My VHL
Print
XML
PubMed Links
Search on Google

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett Year: 2024 Document type: Article Country of publication: United States