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Ultrahigh electromechanical response from competing ferroic orders.
Lin, Baichen; Ong, Khuong Phuong; Yang, Tiannan; Zeng, Qibin; Hui, Hui Kim; Ye, Zhen; Sim, Celine; Yen, Zhihao; Yang, Ping; Dou, Yanxin; Li, Xiaolong; Gao, Xingyu; Tan, Chee Kiang Ivan; Lim, Zhi Shiuh; Zeng, Shengwei; Luo, Tiancheng; Xu, Jinlong; Tong, Xin; Li, Patrick Wen Feng; Ren, Minqin; Zeng, Kaiyang; Sun, Chengliang; Ramakrishna, Seeram; Breese, Mark B H; Boothroyd, Chris; Lee, Chengkuo; Singh, David J; Lam, Yeng Ming; Liu, Huajun.
Affiliation
  • Lin B; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Ong KP; School of Materials Science and Engineering, Nanyang Technological University, Singapore, Republic of Singapore.
  • Yang T; Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Zeng Q; Interdisciplinary Research Center, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, China.
  • Hui HK; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Ye Z; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Sim C; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Yen Z; Department of Mechanical Engineering, National University of Singapore, Singapore, Republic of Singapore.
  • Yang P; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Dou Y; School of Materials Science and Engineering, Nanyang Technological University, Singapore, Republic of Singapore.
  • Li X; School of Materials Science and Engineering, Nanyang Technological University, Singapore, Republic of Singapore.
  • Gao X; Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore, Republic of Singapore.
  • Tan CKI; Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore, Republic of Singapore.
  • Lim ZS; Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China.
  • Zeng S; Shanghai Synchrotron Radiation Facility (SSRF), Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, China.
  • Luo T; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Xu J; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Tong X; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Li PWF; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Ren M; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Zeng K; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Republic of Singapore.
  • Sun C; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, Republic of Singapore.
  • Ramakrishna S; Institute of Technological Sciences, Wuhan University, Wuhan, China.
  • Breese MBH; School of Materials Science and Engineering, Nanyang Technological University, Singapore, Republic of Singapore.
  • Boothroyd C; Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore, Republic of Singapore.
  • Lee C; Department of Mechanical Engineering, National University of Singapore, Singapore, Republic of Singapore.
  • Singh DJ; Institute of Technological Sciences, Wuhan University, Wuhan, China.
  • Lam YM; Department of Mechanical Engineering, National University of Singapore, Singapore, Republic of Singapore.
  • Liu H; Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore, Republic of Singapore.
Nature ; 633(8031): 798-803, 2024 Sep.
Article in En | MEDLINE | ID: mdl-39261737
ABSTRACT
Materials with electromechanical coupling are essential for transducers and acoustic devices as reversible converters between mechanical and electrical energy1-6. High electromechanical responses are typically found in materials with strong structural instabilities, conventionally achieved by two strategies-morphotropic phase boundaries7 and nanoscale structural heterogeneity8. Here we demonstrate a different strategy to accomplish ultrahigh electromechanical response by inducing extreme structural instability from competing antiferroelectric and ferroelectric orders. Guided by the phase diagram and theoretical calculations, we designed the coexistence of antiferroelectric orthorhombic and ferroelectric rhombohedral phases in sodium niobate thin films. These films show effective piezoelectric coefficients above 5,000 pm V-1 because of electric-field-induced antiferroelectric-ferroelectric phase transitions. Our results provide a general approach to design and exploit antiferroelectric materials for electromechanical devices.

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nature Year: 2024 Document type: Article Country of publication: United kingdom

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nature Year: 2024 Document type: Article Country of publication: United kingdom