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Structural and excitonic properties of the polycrystalline FAPbI3thin films, and their photovoltaic responses.
Huang, Yi-Chun; Yen, I-Jane; Tseng, Chih-Hsien; Wang, Hui-Yu; Chandel, Anjali; Chang, Sheng Hsiung.
Affiliation
  • Huang YC; Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC.
  • Yen IJ; Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC.
  • Tseng CH; Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC.
  • Wang HY; Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC.
  • Chandel A; Department of Physics, Chung Yuan Christian University, Taoyuan 320314, Taiwan, ROC.
  • Chang SH; Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan, ROC.
Nanotechnology ; 35(50)2024 Oct 04.
Article in En | MEDLINE | ID: mdl-39321821
ABSTRACT
Faormamadinium based perovskites have been proposed to replace the methylammonium lead tri-iodide (MAPbI3) perovskite as the light absorbing layer of photovoltaic cells owing to their photo-active and chemically stable properties. However, the crystal phase transition from the photo-activeα-FAPbI3to the non-perovksiteδ-FAPbI3still occurs in un-doped FAPbI3films owing to the existence of crack defects, which degrads the photovoltaic responses. To investigate the crack ratio (CR)-dependent structure and excitonic characteristics of the polycrystalline FAPbI3thin films deposited on the carboxylic acid functionalized ITO/glass substrates, various spectra and images were measured and analyzed, which can be utilized to make sense of the different devices responses of the resultant perovskite based photovoltaic cells. Our experimental results show that the there is a trade-off between the formations of surface defects and trapped iodide-mediated defects, thereby resulting in an optimal crack density or CR of the un-dopedα-FAPbI3active layer in the range from 4.86% to 9.27%. The decrease in the CR (tensile stress) results in the compressive lattice and thereby trapping the iodides near the PbI6octahedra in the bottom region of the FAPbI3perovskite films. When the CR of the FAPbI3film is 8.47%, the open-circuit voltage (short-circuit current density) of the resultant photovoltaic cells significantly increased from 0.773 V (16.62 mA cm-2) to 0.945 V (18.20 mA cm-2) after 3 d. Our findings help understanding the photovoltaic responses of the FAPbI3perovskite based photovoltaic cells on the different days.
Key words

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2024 Document type: Article Country of publication: United kingdom

Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nanotechnology Year: 2024 Document type: Article Country of publication: United kingdom