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TexSe1-x Shortwave Infrared Photodiode Arrays with Monolithic Integration.
Peng, Meng; He, Yuming; Hu, Yuxuan; Liu, Zunyu; Chen, Xinyi; Liu, Zhiqiang; Yang, Junrui; Chen, Maohua; Liu, Weijie; Wu, Feng; Li, Luying; Dai, Jiangnan; Chen, Changqing; He, Jungang; Hu, Long; Chen, Chao; Tang, Jiang.
Affiliation
  • Peng M; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • He Y; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Hu Y; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Liu Z; China-EU Institute for Clean and Renewable Energy, Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Chen X; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Liu Z; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Yang J; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Chen M; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Liu W; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Wu F; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Li L; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Dai J; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Chen C; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • He J; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
  • Hu L; Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei 430205, P. R. China.
  • Chen C; School of Materials Science and Engineering, University of New South Wales, Sydney, New South Wales 2052, Australia.
  • Tang J; Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information (SOEI), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R. China.
Nano Lett ; 24(40): 12620-12627, 2024 Oct 09.
Article in En | MEDLINE | ID: mdl-39324698
ABSTRACT
TexSe1-x shortwave infrared (SWIR) photodetectors show promise for monolithic integration with readout integrated circuits (ROIC), making it a potential alternative to conventional expensive SWIR photodetectors. However, challenges such as a high dark current density and insufficient detection performance hinder their application in large-scale monolithic integration. Herein, we develop a ZnO/TexSe1-x heterojunction photodiode and synergistically address the interfacial elemental diffusion and dangling bonds via inserting a well-selected 0.3 nm amorphous TeO2 interfacial layer. The optimized device achieves a reduced dark current density of -3.5 × 10-5 A cm-2 at -10 mV, a broad response from 300 to 1700 nm, a room-temperature detectivity exceeding 2.03 × 1011 Jones, and a 3 dB bandwidth of 173 kHz. Furthermore, for the first time, we monolithically integrate the TexSe1-x photodiodes on ROIC (64 × 64 pixels) with the largest-scale array among all TexSe1-x-based detectors. Finally, we demonstrate its applications in transmission imaging and substance identification.
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett / Nano lett / Nano letters Year: 2024 Document type: Article Country of publication: United States
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Full text: 1 Collection: 01-internacional Database: MEDLINE Language: En Journal: Nano Lett / Nano lett / Nano letters Year: 2024 Document type: Article Country of publication: United States