Band-edge excitons in gallium arsenide on silicon.
Phys Rev B Condens Matter
; 40(3): 1652-1656, 1989 Jul 15.
Article
in En
| MEDLINE
| ID: mdl-9992022
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Collection:
01-internacional
Database:
MEDLINE
Language:
En
Journal:
Phys Rev B Condens Matter
Year:
1989
Document type:
Article
Country of publication:
United States