Your browser doesn't support javascript.
loading
Damage and ablation of large bandgap dielectrics induced by a 46.9 nm laser beam.
Ritucci, A; Tomassetti, G; Reale, A; Arrizza, L; Zuppella, P; Reale, L; Palladino, L; Flora, F; Bonfigli, F; Faenov, A; Pikuz, T; Kaiser, J; Nilsen, J; Jankowski, A F.
Afiliación
  • Ritucci A; Department of Physics, University of L'Aquila, gc Laboratorio Nazionale del Gran Sasso, Istituto Nazionale di Fisica Nucleare, 67010 Coppito, L'Aquila, Italy. antonio.ritucci@aquila.infn.it
Opt Lett ; 31(1): 68-70, 2006 Jan 01.
Article en En | MEDLINE | ID: mdl-16419880
We applied a 0.3 mJ, 1.7 ns, 46.9 nm soft-x-ray argon laser to ablate the surface of large bandgap dielectrics: CaF2 and LiF crystals. We studied the ablation versus the fluence of the soft-x-ray beam, varying the fluence in the range 0.05-3 J/cm2. Ablation thresholds of 0.06 and 0.1 J/cm2 and ablation depths of 14 and 20 nm were found for CaF2 and LiF, respectively. These results define new ablation conditions for these large bandgap dielectrics that can be of interest for the fine processing of these materials.
Buscar en Google
Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Opt Lett Año: 2006 Tipo del documento: Article País de afiliación: Italia Pais de publicación: Estados Unidos
Buscar en Google
Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Opt Lett Año: 2006 Tipo del documento: Article País de afiliación: Italia Pais de publicación: Estados Unidos