Light-emitting field-effect transistors having combined organic semiconductor and metal oxide layers.
Adv Mater
; 25(20): 2860-6, 2013 May 28.
Article
en En
| MEDLINE
| ID: mdl-23568513
ABSTRACT
A new organic light-emitting field-effect transistor characterized by a metal oxide layer inserted between the organic layer and the gate insulator is proposed. The metal oxide is indirectly connected with source and drain electrodes through the organic layer. Upon increasing the potential difference between the source and drain electrodes, the emission becomes exceedingly strong and the emission region encompasses the whole channel zone.
Texto completo:
1
Colección:
01-internacional
Base de datos:
MEDLINE
Asunto principal:
Compuestos Orgánicos
/
Óxidos
/
Transistores Electrónicos
/
Iluminación
/
Metales
Idioma:
En
Revista:
Adv Mater
Asunto de la revista:
BIOFISICA
/
QUIMICA
Año:
2013
Tipo del documento:
Article
País de afiliación:
Japón