Single-step deposition of high-mobility graphene at reduced temperatures.

Boyd, D A; Lin, W-H; Hsu, C-C; Teague, M L; Chen, C-C; Lo, Y-Y; Chan, W-Y; Su, W-B; Cheng, T-C; Chang, C-S; Wu, C-I; Yeh, N-C

Boyd, D A; Lin, W-H; Hsu, C-C; Teague, M L; Chen, C-C; Lo, Y-Y; Chan, W-Y; Su, W-B; Cheng, T-C; Chang, C-S; Wu, C-I; Yeh, N-C.

Afiliación

Boyd DA; Department of Physics, California Institute of Technology, Pasadena, California 91125, USA.
Lin WH; Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA.
Hsu CC; 1] Department of Physics, California Institute of Technology, Pasadena, California 91125, USA [2] Institute of Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA.
Teague ML; 1] Department of Physics, California Institute of Technology, Pasadena, California 91125, USA [2] Institute of Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA.
Chen CC; 1] Department of Physics, California Institute of Technology, Pasadena, California 91125, USA [2] Institute of Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA.
Lo YY; Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 10617.
Chan WY; Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan 115.
Su WB; Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan 115.
Cheng TC; Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 10617.
Chang CS; Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan 115.
Wu CI; Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan 10617.
Yeh NC; 1] Department of Physics, California Institute of Technology, Pasadena, California 91125, USA [2] Institute of Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, USA [3] Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California

Nat Commun ; 6: 6620, 2015 Mar 18.

Article en En | MEDLINE | ID: mdl-25782977

RESUMEN

Current methods of chemical vapour deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (<420 °C), and in a matter of minutes. Growth on copper foils is found to nucleate from arrays of well-aligned domains, and the ensuing films possess sub-nanometre smoothness, excellent crystalline quality, low strain, few defects and room-temperature electrical mobility up to (6.0±1.0) × 10(4) cm(2) V(-1) s(-1), better than that of large, single-crystalline graphene derived from thermal CVD growth. These results indicate that elevated temperatures and crystalline substrates are not necessary for synthesizing high-quality graphene.

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nat Commun Asunto de la revista: BIOLOGIA / CIENCIA Año: 2015 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Reino Unido

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