Facet-Selective Nucleation and Conformal Epitaxy of Ge Shells on Si Nanowires.

Nguyen, Binh-Minh; Swartzentruber, Brian; Ro, Yun Goo; Dayeh, Shadi A

Nguyen, Binh-Minh; Swartzentruber, Brian; Ro, Yun Goo; Dayeh, Shadi A.

Afiliación

Nguyen BM; Center for Integrated Nanotechnologies, Los Alamos National Laboratory , Los Alamos, New Mexico 87545, United States.
Swartzentruber B; Department of Electrical and Computer Engineering, University of California San Diego , La Jolla, California 92093, United States.
Ro YG; Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
Dayeh SA; Department of Electrical and Computer Engineering, University of California San Diego , La Jolla, California 92093, United States.

Nano Lett ; 15(11): 7258-64, 2015 Nov 11.

Article en En | MEDLINE | ID: mdl-26447652

Palabras clave

FET; Ge; Si; core/shell; facet; misfit dislocation; nanowire; nucleation

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Nano Lett Año: 2015 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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