Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection.

Zheng, Jinjian; Li, Shuiqing; Chou, Chilun; Lin, Wei; Xun, Feilin; Guo, Fei; Zheng, Tongchang; Li, Shuping; Kang, Junyong

Zheng, Jinjian; Li, Shuiqing; Chou, Chilun; Lin, Wei; Xun, Feilin; Guo, Fei; Zheng, Tongchang; Li, Shuping; Kang, Junyong.

Afiliación

Zheng J; Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, China.
Li S; San'an Optoelectronics Co., Ltd., Xiamen, 361005, China.
Chou C; San'an Optoelectronics Co., Ltd., Xiamen, 361005, China.
Lin W; San'an Optoelectronics Co., Ltd., Xiamen, 361005, China.
Xun F; Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, China.
Guo F; San'an Optoelectronics Co., Ltd., Xiamen, 361005, China.
Zheng T; Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, China.
Li S; Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, China.
Kang J; Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen, 361005, China.

Sci Rep ; 5: 17227, 2015 Dec 04.

Article en En | MEDLINE | ID: mdl-26634816

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2015 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido

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