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Resonantly Enhanced Second-Harmonic Generation Using III-V Semiconductor All-Dielectric Metasurfaces.
Liu, Sheng; Sinclair, Michael B; Saravi, Sina; Keeler, Gordon A; Yang, Yuanmu; Reno, John; Peake, Gregory M; Setzpfandt, Frank; Staude, Isabelle; Pertsch, Thomas; Brener, Igal.
Afiliación
  • Liu S; Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
  • Sinclair MB; Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
  • Saravi S; Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
  • Keeler GA; Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
  • Yang Y; Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
  • Reno J; Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
  • Peake GM; Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
  • Setzpfandt F; Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
  • Staude I; Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
  • Pertsch T; Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
  • Brener I; Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
Nano Lett ; 16(9): 5426-32, 2016 09 14.
Article en En | MEDLINE | ID: mdl-27501472
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Nano Lett Año: 2016 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos