Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi2Se3 and MoS2 atomic layers.

Vargas, Anthony; Liu, Fangze; Lane, Christopher; Rubin, Daniel; Bilgin, Ismail; Hennighausen, Zachariah; DeCapua, Matthew; Bansil, Arun; Kar, Swastik

Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi₂Se₃ and MoS₂ atomic layers.

Vargas, Anthony; Liu, Fangze; Lane, Christopher; Rubin, Daniel; Bilgin, Ismail; Hennighausen, Zachariah; DeCapua, Matthew; Bansil, Arun; Kar, Swastik.

Afiliación

Vargas A; Department of Physics, Northeastern University, Boston, MA 02115, USA.
Liu F; Department of Physics, Northeastern University, Boston, MA 02115, USA.
Lane C; Materials Synthesis and Integrated Devices Group (MPA-11), Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
Rubin D; Department of Physics, Northeastern University, Boston, MA 02115, USA.
Bilgin I; Department of Physics, Northeastern University, Boston, MA 02115, USA.
Hennighausen Z; Department of Physics, Northeastern University, Boston, MA 02115, USA.
DeCapua M; Department of Physics, Northeastern University, Boston, MA 02115, USA.
Bansil A; Department of Physics, Northeastern University, Boston, MA 02115, USA.
Kar S; Department of Physics, Northeastern University, Boston, MA 02115, USA.

Sci Adv ; 3(7): e1601741, 2017 07.

Article en En | MEDLINE | ID: mdl-28740860

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Tipo de estudio: Prognostic_studies Idioma: En Revista: Sci Adv Año: 2017 Tipo del documento: Article País de afiliación: Estados Unidos Pais de publicación: Estados Unidos

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