Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation.

Zhang, L Q; Zhang, C H; Li, J J; Meng, Y C; Yang, Y T; Song, Y; Ding, Z N; Yan, T X

Damage to epitaxial GaN layer on Al₂O₃ by 290-MeV ²³⁸U³²⁺ ions irradiation.

Zhang, L Q; Zhang, C H; Li, J J; Meng, Y C; Yang, Y T; Song, Y; Ding, Z N; Yan, T X.

Afiliación

Zhang LQ; Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China.
Zhang CH; University of Chinese Academy of Sciences, Beijing, 100049, China.
Li JJ; Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China. c.h.zhang@impcas.ac.cn.
Meng YC; Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China.
Yang YT; University of Chinese Academy of Sciences, Beijing, 100049, China.
Song Y; Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China.
Ding ZN; University of Chinese Academy of Sciences, Beijing, 100049, China.
Yan TX; Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000, China.

Sci Rep ; 8(1): 4121, 2018 Mar 07.

Article en En | MEDLINE | ID: mdl-29515199

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Sci Rep Año: 2018 Tipo del documento: Article País de afiliación: China Pais de publicación: Reino Unido

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