Ultra-high Photovoltage (2.45 V) Forming in Graphene Heterojunction via Quasi-Fermi Level Splitting Enhanced Effect.

Jia, Lemin; Zheng, Wei; Lin, Richeng; Huang, Feng

Jia, Lemin; Zheng, Wei; Lin, Richeng; Huang, Feng.

Afiliación

Jia L; State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China.
Zheng W; State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China. Electronic address: zhengw37@mail.sysu.edu.cn.
Lin R; State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China.
Huang F; State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-sen University, Guangzhou 510275, China.

iScience ; 23(2): 100818, 2020 Feb 21.

Article en En | MEDLINE | ID: mdl-32004991

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Devices; Electronic Materials; Energy Materials

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: IScience Año: 2020 Tipo del documento: Article País de afiliación: China