Energy-Efficient Tunneling Field-Effect Transistors for Low-Power Device Applications: Challenges and Opportunities.

Nazir, Ghazanfar; Rehman, Adeela; Park, Soo-Jin

Nazir, Ghazanfar; Rehman, Adeela; Park, Soo-Jin.

Afiliación

Nazir G; Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea.
Rehman A; Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea.
Park SJ; Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea.

ACS Appl Mater Interfaces ; 12(42): 47127-47163, 2020 Oct 21.

Article en En | MEDLINE | ID: mdl-32914955

Palabras clave

2D materials; I60; III−V semiconductors; TFET; band alignment; quantum tunneling; subthreshold swing

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2020 Tipo del documento: Article

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