Effect of Preparation Parameters on Deep-Blue Light-Emitting Diodes Based on Nanostructured ZnSe/ZnS Multilayer Films.

Ou, Kai; Bai, Liyuan; Huang, Miaoling; Yi, Lixin; Duan, Xiaoxia; Wang, Shenwei

Ou, Kai; Bai, Liyuan; Huang, Miaoling; Yi, Lixin; Duan, Xiaoxia; Wang, Shenwei.

Afiliación

Ou K; School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
Bai L; Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Huang M; Ningbo Institute of Technology, Zhejiang University, Ningbo 315100, China.
Yi L; Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Duan X; Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Wang S; Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.

ACS Omega ; 5(38): 24567-24573, 2020 Sep 29.

Article en En | MEDLINE | ID: mdl-33015474

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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Omega Año: 2020 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos

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