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Proximity Effect-Induced Magnetoresistance Enhancement in a Fe3GeTe2/NbSe2/Fe3GeTe2 Magnetic Tunnel Junction.
Zeng, Xiangyu; Ye, Ge; Yang, Fazhi; Ye, Qikai; Zhang, Liang; Ma, Boyang; Liu, Yulu; Xie, Mengwei; Han, Genquan; Hao, Yue; Luo, Jikui; Lu, Xin; Liu, Yan; Wang, Xiaozhi.
Afiliación
  • Zeng X; Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
  • Ye G; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Yang F; Center for Correlated Matter and Department of Physics, Zhejiang University, Hangzhou 310027, China.
  • Ye Q; Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
  • Zhang L; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.
  • Ma B; Research Center for Humanoid Sensing and Perception, Zhejiang Lab, Hangzhou 311100, China.
  • Liu Y; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.
  • Xie M; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.
  • Han G; Center for Correlated Matter and Department of Physics, Zhejiang University, Hangzhou 310027, China.
  • Hao Y; Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
  • Luo J; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Lu X; Hangzhou Institute of Technology, Xidian University, Hangzhou 311200, China.
  • Liu Y; State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
  • Wang X; College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China.
ACS Appl Mater Interfaces ; 2023 Dec 05.
Article en En | MEDLINE | ID: mdl-38050752
The coupling between van der Waals-layered magnetic and superconducting materials holds the possibility of revealing novel physical mechanisms and realizing spintronic devices with new functionalities. Here, we report on the realization and investigation of a maximum ∼17-fold magnetoresistance (MR) enhancement based on a vertical magnetic tunnel junction of Fe3GeTe2 (FGT)/NbSe2/FGT near the NbSe2 layer's superconducting critical temperature (TC) of 6.8 K. This enhancement is attributed to the band splitting in the atomically thin NbSe2 spacer layer induced by the magnetic proximity effect on the material interfaces. However, the band splitting is strongly suppressed by the interlayer coupling in the thick NbSe2 layer. Correspondingly, the device with a thick NbSe2 layer displays no MR increase near TC but a current dependent on transport properties at extremely low temperatures. This work carefully investigates the mechanism of MR enhancement, paving an efficient way for the modulation of spintronics' properties and the achievement of spin-based integrated circuits.
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos
Texto completo
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Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Asunto de la revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Año: 2023 Tipo del documento: Article País de afiliación: China Pais de publicación: Estados Unidos