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Localization of Chiral Edge States by the Non-Hermitian Skin Effect.
Liu, Gui-Geng; Mandal, Subhaskar; Zhou, Peiheng; Xi, Xiang; Banerjee, Rimi; Hu, Yuan-Hang; Wei, Minggui; Wang, Maoren; Wang, Qiang; Gao, Zhen; Chen, Hongsheng; Yang, Yihao; Chong, Yidong; Zhang, Baile.
Afiliación
  • Liu GG; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
  • Mandal S; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
  • Zhou P; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
  • Xi X; School of Electrical Engineering and Intelligentization, Dongguan University of Technology, Dongguan 523808, China.
  • Banerjee R; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
  • Hu YH; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
  • Wei M; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
  • Wang M; National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
  • Wang Q; School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, Jiangsu 210093, China.
  • Gao Z; Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
  • Chen H; Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, ZJU-Hangzhou Global Science and Technology Innovation Center, College of Information Science and Electronic Engineering, Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart System
  • Yang Y; Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, ZJU-Hangzhou Global Science and Technology Innovation Center, College of Information Science and Electronic Engineering, Key Laboratory of Advanced Micro/Nano Electronic Devices and Smart System
  • Chong Y; Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
  • Zhang B; Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
Phys Rev Lett ; 132(11): 113802, 2024 Mar 15.
Article en En | MEDLINE | ID: mdl-38563911
ABSTRACT
Quantum Hall systems host chiral edge states extending along the one-dimensional boundary of any two-dimensional sample. In solid state materials, the edge states serve as perfectly robust transport channels that produce a quantized Hall conductance; due to their chirality, and the topological protection by the Chern number of the bulk band structure, they cannot be spatially localized by defects or disorder. Here, we show experimentally that the chiral edge states of a lossy quantum Hall system can be localized. In a gyromagnetic photonic crystal exhibiting the quantum Hall topological phase, an appropriately structured loss configuration imparts the edge states' complex energy spectrum with a feature known as point-gap winding. This intrinsically non-Hermitian topological invariant is distinct from the Chern number invariant of the bulk (which remains intact) and induces mode localization via the "non-Hermitian skin effect." The interplay of the two topological phenomena-the Chern number and point-gap winding-gives rise to a non-Hermitian generalization of the paradigmatic Chern-type bulk-boundary correspondence principle. Compared to previous realizations of the non-Hermitian skin effect, the skin modes in this system have superior robustness against local defects and disorders.

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2024 Tipo del documento: Article País de afiliación: Singapur Pais de publicación: Estados Unidos

Texto completo: 1 Colección: 01-internacional Base de datos: MEDLINE Idioma: En Revista: Phys Rev Lett Año: 2024 Tipo del documento: Article País de afiliación: Singapur Pais de publicación: Estados Unidos