Characterizing electron-collecting CdTe for use in a 77â
ns burst-rate imager.
J Synchrotron Radiat
; 31(Pt 5): 1217-1223, 2024 Sep 01.
Article
en En
| MEDLINE
| ID: mdl-39110677
ABSTRACT
The Keck-PAD (pixel array detector) was developed at Cornell as a burst-rate imager capable of recording images from successive electron bunches (153â
ns period) from the Advanced Photon Source (APS). Both Si and hole-collecting Schottky CdTe have been successfully bonded to this ASIC (application-specific integrated circuit) and used with this frame rate. The facility upgrades at the APS will lower the bunch period to 77â
ns, which will require modifications to the Keck-PAD electronics to image properly at this reduced period. In addition, operation at high X-ray energies will require a different sensor material having a shorter charge collection time. For the target energy of 40â
keV for this project, simulations have shown that electron-collecting CdTe should allow >90% charge collection within 35â
ns. This collection time will be sufficient to sample the signal from one frame and prepare for the next. 750â
µm-thick electron-collecting Schottky CdTe has been obtained from Acrorad and bonded to two different charge-integrating ASICs developed at Cornell, the Keck-PAD and the CU-APS-PAD. Carrier mobility has been investigated using the detector response to single X-ray bunches at the Cornell High Energy Synchrotron Source and to a pulsed optical laser. The tests indicate that the collection time will meet the requirements for 77â
ns imaging.
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Colección:
01-internacional
Base de datos:
MEDLINE
Idioma:
En
Revista:
J Synchrotron Radiat
Asunto de la revista:
RADIOLOGIA
Año:
2024
Tipo del documento:
Article
País de afiliación:
Estados Unidos