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Graphene as a transparent conducting and surface field layer in planar Si solar cells.
Kumar, Rakesh; Mehta, Bodh R; Bhatnagar, Mehar; S, Ravi; Mahapatra, Silika; Salkalachen, Saji; Jhawar, Pratha.
Afiliação
  • Kumar R; Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
  • Mehta BR; Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
  • Bhatnagar M; Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
  • S R; Semiconductor Devices and Photovoltaics Department, Electronics Division, Bharat Heavy Electricals Limited, Mysore Road, Bangalore 560026, India.
  • Mahapatra S; Semiconductor Devices and Photovoltaics Department, Electronics Division, Bharat Heavy Electricals Limited, Mysore Road, Bangalore 560026, India.
  • Salkalachen S; Semiconductor Devices and Photovoltaics Department, Electronics Division, Bharat Heavy Electricals Limited, Mysore Road, Bangalore 560026, India.
  • Jhawar P; Semiconductor Devices and Photovoltaics Department, Electronics Division, Bharat Heavy Electricals Limited, Mysore Road, Bangalore 560026, India.
Nanoscale Res Lett ; 9(1): 349, 2014.
Article em En | MEDLINE | ID: mdl-25114642
This work presents an experimental and finite difference time domain (FDTD) simulation-based study on the application of graphene as a transparent conducting layer on a planar and untextured crystalline p-n silicon solar cell. A high-quality monolayer graphene with 97% transparency and 350 Ω/□ sheet resistance grown by atmospheric pressure chemical vapor deposition method was transferred onto planar Si cells. An increase in efficiency from 5.38% to 7.85% was observed upon deposition of graphene onto Si cells, which further increases to 8.94% upon SiO2 deposition onto the graphene/Si structure. A large increase in photon conversion efficiency as a result of graphene deposition shows that the electronic interaction and the presence of an electric field at the graphene/Si interface together play an important role in this improvement and additionally lead to a reduction in series resistance due to the conducting nature of graphene.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Índia País de publicação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Índia País de publicação: Estados Unidos