New strategies for producing defect free SiGe strained nanolayers.

David, Thomas; Aqua, Jean-Noël; Liu, Kailang; Favre, Luc; Ronda, Antoine; Abbarchi, Marco; Claude, Jean-Benoit; Berbezier, Isabelle

David, Thomas; Aqua, Jean-Noël; Liu, Kailang; Favre, Luc; Ronda, Antoine; Abbarchi, Marco; Claude, Jean-Benoit; Berbezier, Isabelle.

Afiliação

David T; CNRS, Aix Marseille University, UMR 7334, Inst Mat Microelect Nanosci Prov, F-13397, Marseille, France.
Aqua JN; University Paris 06, CNRS UMR 7588, Inst Nanosci Paris, F-75252, Paris, France.
Liu K; CNRS, Aix Marseille University, UMR 7334, Inst Mat Microelect Nanosci Prov, F-13397, Marseille, France.
Favre L; University Paris 06, CNRS UMR 7588, Inst Nanosci Paris, F-75252, Paris, France.
Ronda A; CNRS, Aix Marseille University, UMR 7334, Inst Mat Microelect Nanosci Prov, F-13397, Marseille, France.
Abbarchi M; CNRS, Aix Marseille University, UMR 7334, Inst Mat Microelect Nanosci Prov, F-13397, Marseille, France.
Claude JB; CNRS, Aix Marseille University, UMR 7334, Inst Mat Microelect Nanosci Prov, F-13397, Marseille, France.
Berbezier I; CNRS, Aix Marseille University, UMR 7334, Inst Mat Microelect Nanosci Prov, F-13397, Marseille, France.

Sci Rep ; 8(1): 2891, 2018 02 13.

Article em En | MEDLINE | ID: mdl-29440693

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2018 Tipo de documento: Article País de afiliação: França País de publicação: Reino Unido

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