High-Performance p-BP/n-PdSe<sub>2</sub> Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse.

Afzal, Amir Muhammad; Dastgeer, Ghulam; Iqbal, Muhammad Zahir; Gautam, Praveen; Faisal, Mian Muhammad

High-Performance p-BP/n-PdSe₂ Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse.

Afzal, Amir Muhammad; Dastgeer, Ghulam; Iqbal, Muhammad Zahir; Gautam, Praveen; Faisal, Mian Muhammad.

Afiliação

Afzal AM; Department of Electrical and Biological Physics, KwangWoon University, Seoul 01897, Republic of Korea.
Dastgeer G; IBS Center for Integrated Nanostructure Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Iqbal MZ; Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan.
Gautam P; Department of Physics & Astronomy and Graphene Research Institute, Sejong University, Seoul 05006, Korea.
Faisal MM; Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan.

ACS Appl Mater Interfaces ; 12(17): 19625-19634, 2020 Apr 29.

Article em En | MEDLINE | ID: mdl-32242654

Palavras-chave

Transition-metal dichalcogenide materials; detectivity; near-infrared; palladium diselenide; photoresponsivity; rectification

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2020 Tipo de documento: Article País de publicação: Estados Unidos

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