Bottom-Up Copper Filling of Millimeter Size Through Silicon Vias.

Josell, D; Menk, L A; Hollowell, A E; Blain, M; Moffat, T P

Josell, D; Menk, L A; Hollowell, A E; Blain, M; Moffat, T P.

Afiliação

Josell D; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20878, USA.
Menk LA; Microsystems and Engineering Sciences Applications (MESA) Complex, Sandia National Laboratories, Albuquerque, New Mexico 87123, USA.
Hollowell AE; Microsystems and Engineering Sciences Applications (MESA) Complex, Sandia National Laboratories, Albuquerque, New Mexico 87123, USA.
Blain M; Microsystems and Engineering Sciences Applications (MESA) Complex, Sandia National Laboratories, Albuquerque, New Mexico 87123, USA.
Moffat TP; Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20878, USA.

J Electrochem Soc ; 166(1)2019.

Article em En | MEDLINE | ID: mdl-33041355

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Electrochem Soc Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Reino Unido

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