Structures, Electronic Properties and Carrier Transport Mechanisms of Si Nano-Crystalline Embedded in the Amorphous SiC Films with Various Si/C Ratios.

Shan, Dan; Sun, Daoyuan; Tang, Mingjun; Yang, Ruihong; Kang, Guangzhen; Tao, Tao; Cao, Yunqing

Shan, Dan; Sun, Daoyuan; Tang, Mingjun; Yang, Ruihong; Kang, Guangzhen; Tao, Tao; Cao, Yunqing.

Afiliação

Shan D; School of Electronic and Information Engineering, Yangzhou Polytechnic Institute, Yangzhou 225127, China.
Sun D; College of Physical Science and Technology, Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225009, China.
Tang M; Engineering Research Center of Environmental Pollutant Sensing Detection and Treatment of Jiangsu Province, Yangzhou Polytechnic Institute, Yangzhou 225127, China.
Yang R; College of Physical Science and Technology, Institute of Optoelectronic Technology, Yangzhou University, Yangzhou 225009, China.
Kang G; School of Electronic and Information Engineering, Yangzhou Polytechnic Institute, Yangzhou 225127, China.
Tao T; School of Electronic and Information Engineering, Yangzhou Polytechnic Institute, Yangzhou 225127, China.
Cao Y; School of Electronic and Information Engineering, Yangzhou Polytechnic Institute, Yangzhou 225127, China.

Nanomaterials (Basel) ; 11(10)2021 Oct 12.

Article em En | MEDLINE | ID: mdl-34685119

Palavras-chave

Si nanocrystals; carrier transport; electronic properties; temperature dependence Hall effect measurement

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China País de publicação: Suíça

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