Etched-And-Regrown GaN P-N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching.

Li, Bingjun; Wang, Sizhen; Nami, Mohsen; Armstrong, Andrew M; Han, Jung

Li, Bingjun; Wang, Sizhen; Nami, Mohsen; Armstrong, Andrew M; Han, Jung.

Afiliação

Li B; Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.
Wang S; Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.
Nami M; Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.
Armstrong AM; Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
Han J; Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, United States.

ACS Appl Mater Interfaces ; 13(44): 53220-53226, 2021 Nov 10.

Article em En | MEDLINE | ID: mdl-34706193

Palavras-chave

GaN; Si impurity; etched-and-regrown diode; in situ TBCl etching; regrowth interface

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Estados Unidos País de publicação: Estados Unidos

Texto completo

Adicionar na Minha BVS

Imprimir

XML

PubMed Links

Buscar no Google