Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor.

Jin, Risheng; Wang, Jin; Shi, Keli; Qiu, Beibei; Ma, Lanchao; Huang, Shihua; Li, Zhengquan

Jin, Risheng; Wang, Jin; Shi, Keli; Qiu, Beibei; Ma, Lanchao; Huang, Shihua; Li, Zhengquan.

Afiliação

Jin R; College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China shikl@zjnu.edu.cn huangshihua@zjnu.cn.
Wang J; Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China zqli@zjnu.edu.cn.
Shi K; College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China shikl@zjnu.edu.cn huangshihua@zjnu.cn.
Qiu B; College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China shikl@zjnu.edu.cn huangshihua@zjnu.cn.
Ma L; College of Materials Science and Engineering, Beijing Key Laboratory of Special Elastomer Composite Materials, Beijing Institute of Petrochemical Technology Beijing 102617 P. R. China.
Huang S; College of Physics and Electronic Information Engineering, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China shikl@zjnu.edu.cn huangshihua@zjnu.cn.
Li Z; Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University Jinhua Zhejiang 321004 P. R. China zqli@zjnu.edu.cn.

RSC Adv ; 10(70): 43225-43232, 2020 Nov 23.

Article em En | MEDLINE | ID: mdl-35514915

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: RSC Adv Ano de publicação: 2020 Tipo de documento: Article