Post-silicon nano-electronic device and its application in brain-inspired chips.

Lv, Yi; Chen, Houpeng; Wang, Qian; Li, Xi; Xie, Chenchen; Song, Zhitang

Lv, Yi; Chen, Houpeng; Wang, Qian; Li, Xi; Xie, Chenchen; Song, Zhitang.

Afiliação

Lv Y; State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
Chen H; University of Chinese Academy of Sciences, Beijing, China.
Wang Q; State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
Li X; University of Chinese Academy of Sciences, Beijing, China.
Xie C; Shanghai Technology Development and Entrepreneurship Platform for Neuromorphic and AI SoC, Shanghai, China.
Song Z; State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.

Front Neurorobot ; 16: 948386, 2022.

Article em En | MEDLINE | ID: mdl-35966373

Palavras-chave

brain-inspired chips; neuron; phase change memory; post-silicon nano-electronic device; resistive memory; synapse

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Front Neurorobot Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China País de publicação: Suíça

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