Physically Transient, Flexible, and Resistive Random Access Memory Based on Silver Ions and Egg Albumen Composites.

Wang, Lu; Zhang, Yukai; Zhang, Peng; Wen, Dianzhong

Wang, Lu; Zhang, Yukai; Zhang, Peng; Wen, Dianzhong.

Afiliação

Wang L; School of Electronic Engineering, Heilongjiang University and Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
Zhang Y; School of Electronic Engineering, Heilongjiang University and Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
Zhang P; School of Electronic Engineering, Heilongjiang University and Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
Wen D; School of Electronic Engineering, Heilongjiang University and Heilongjiang Provincial Key Laboratory of Micro-Nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.

Nanomaterials (Basel) ; 12(17)2022 Sep 03.

Article em En | MEDLINE | ID: mdl-36080098

Palavras-chave

egg albumen; logic gate; physically transient; resistive memory; silver ions

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China País de publicação: Suíça

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