A Fast-Transient-Response NMOS LDO with Wide Load-Capacitance Range for Cross-Point Memory.

He, Luchang; Li, Xi; Xu, Siqiu; Pan, Guochang; Xie, Chenchen; Chen, Houpeng; Song, Zhitang

He, Luchang; Li, Xi; Xu, Siqiu; Pan, Guochang; Xie, Chenchen; Chen, Houpeng; Song, Zhitang.

Afiliação

He L; School of Microelectronics, University of Science and Technology of China, Hefei 230026, China.
Li X; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Xu S; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Pan G; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Xie C; School of Microelectronics, University of Science and Technology of China, Hefei 230026, China.
Chen H; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Song Z; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

Sensors (Basel) ; 22(23)2022 Dec 01.

Article em En | MEDLINE | ID: mdl-36502074

Assuntos

Amplificadores Eletrônicos; Capacitância Elétrica

Palavras-chave

cross-point memory; fast transient response; flipped voltage amplifier; load capacitance; low-dropout regulator

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Amplificadores Eletrônicos Idioma: En Revista: Sensors (Basel) Ano de publicação: 2022 Tipo de documento: Article País de afiliação: China País de publicação: Suíça

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