N-Type Printed Organic Source-Gated Transistors with High Intrinsic Gain.

Hemmi, Yudai; Ikeda, Yuji; Sporea, Radu A; Takeda, Yasunori; Tokito, Shizuo; Matsui, Hiroyuki

Hemmi, Yudai; Ikeda, Yuji; Sporea, Radu A; Takeda, Yasunori; Tokito, Shizuo; Matsui, Hiroyuki.

Afiliação

Hemmi Y; Research Center for Organic Electronics (ROEL), Yamagata University, Jonan 4-3-16, Yonezawa, Yamagata 992-8510, Japan.
Ikeda Y; Research Center for Organic Electronics (ROEL), Yamagata University, Jonan 4-3-16, Yonezawa, Yamagata 992-8510, Japan.
Sporea RA; Advanced Technology Institute, School of Computer Science and Electronic Engineering, University of Surrey, Guildford GU2 7XH, UK.
Takeda Y; Research Center for Organic Electronics (ROEL), Yamagata University, Jonan 4-3-16, Yonezawa, Yamagata 992-8510, Japan.
Tokito S; Research Center for Organic Electronics (ROEL), Yamagata University, Jonan 4-3-16, Yonezawa, Yamagata 992-8510, Japan.
Matsui H; Research Center for Organic Electronics (ROEL), Yamagata University, Jonan 4-3-16, Yonezawa, Yamagata 992-8510, Japan.

Nanomaterials (Basel) ; 12(24)2022 Dec 14.

Article em En | MEDLINE | ID: mdl-36558295

Palavras-chave

amplifiers; contact effects; intrinsic gain; organic transistors; printed electronics

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanomaterials (Basel) Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Japão

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