Direct Laser Irradiation and Modification of 2D Te for Development of Volatile Memristor.

Wang, Genwang; Guan, Yanchao; Wang, Yang; Ding, Ye; Yang, Lijun

Wang, Genwang; Guan, Yanchao; Wang, Yang; Ding, Ye; Yang, Lijun.

Afiliação

Wang G; Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China.
Guan Y; School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
Wang Y; Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China.
Ding Y; School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001, China.
Yang L; Key Laboratory of Microsystems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150001, China.

Materials (Basel) ; 16(2)2023 Jan 12.

Article em En | MEDLINE | ID: mdl-36676475

Palavras-chave

defects; laser irradiation; oxides; tellurene; volatile memristor

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China País de publicação: Suíça

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