Oxygen Aspects in the High-Pressure and High-Temperature Sintering of Semiconductor Kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> Nanopowders Prepared by a Mechanochemically-Assisted Synthesis Method.

Lejda, Katarzyna; Janik, Jerzy F; Perzanowski, Marcin; Stelmakh, Svitlana; Palosz, Bogdan

Oxygen Aspects in the High-Pressure and High-Temperature Sintering of Semiconductor Kesterite Cu₂ZnSnS₄ Nanopowders Prepared by a Mechanochemically-Assisted Synthesis Method.

Lejda, Katarzyna; Janik, Jerzy F; Perzanowski, Marcin; Stelmakh, Svitlana; Palosz, Bogdan.

Afiliação

Lejda K; Faculty of Energy and Fuels, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland.
Janik JF; Faculty of Energy and Fuels, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Kraków, Poland.
Perzanowski M; Institute of Nuclear Physics, Polish Academy of Sciences, ul. Radzikowskiego 152, 31-342 Kraków, Poland.
Stelmakh S; Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warszawa, Poland.
Palosz B; Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokolowska 29/37, 01-142 Warszawa, Poland.

Int J Mol Sci ; 24(4)2023 Feb 05.

Article em En | MEDLINE | ID: mdl-36834571

Assuntos

Semicondutores; Temperatura; Pós; Espectroscopia de Infravermelho com Transformada de Fourier

Palavras-chave

high-pressure and high-temperature sintering; kesterite Cu2ZnSnS4; mechanochemical synthesis; nanoceramics; nanopowders; oxygen contamination; semiconductor for photovoltaics

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Semicondutores Idioma: En Revista: Int J Mol Sci Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Polônia País de publicação: Suíça

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