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ZrTe2 Compound Dirac Semimetal Contacts for High-Performance MoS2 Transistors.
Wen, Xiaokun; Lei, Wenyu; Li, Xinlu; Di, Boyuan; Zhou, Ye; Zhang, Jia; Zhang, Yuhui; Li, Liufan; Chang, Haixin; Zhang, Wenfeng.
Afiliação
  • Wen X; Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
  • Lei W; Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, People's Republic of China.
  • Li X; Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
  • Di B; Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, People's Republic of China.
  • Zhou Y; School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China.
  • Zhang J; Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
  • Zhang Y; Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, People's Republic of China.
  • Li L; School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China.
  • Chang H; School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China.
  • Zhang W; Center for Joining and Electronic Packaging, State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
Nano Lett ; 23(18): 8419-8425, 2023 Sep 27.
Article em En | MEDLINE | ID: mdl-37708326

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article País de publicação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article País de publicação: Estados Unidos