Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region.
Micromachines (Basel)
; 15(7)2024 Jun 24.
Article
em En
| MEDLINE
| ID: mdl-39064326
ABSTRACT
To enhance the electrical safe operation area (eSOA) of laterally diffused metal oxide semiconductor (LDMOS) transistors, a novel reduced surface electric field (Resurf) structure in the n-drift region is proposed, which was fabricated by ion implantation at the surface of the LDMOS drift region and by drift region dimension optimization. Technology computer-aided design (TCAD) simulations show that the optimal value of Resurf ion implantation dose 1 × 1012 cm-2 can reduce the surface electric field in the n-drift region effectively, thereby improving the ON-state breakdown voltage of the device (BVon). In addition, the extended n-drift region length of the Ld design also improves device BVon significantly, and is aimed at reducing the current density and the electric field, and eventually suppressing the n-drift region impact ionization. The results show that the novel 60 V nLDMOS has a competitive BVon performance of 106.9 V, which is about 20% higher than that of the conventional one. Meanwhile, the OFF-state breakdown voltage of the device (BVoff) of 88.4 V and the specific ON-resistance (RON,sp) of 129.7 mΩâ
mm2 exhibit only a slight sacrifice.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Micromachines (Basel)
Ano de publicação:
2024
Tipo de documento:
Article
País de afiliação:
China
País de publicação:
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