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High-Performance Semiconducting Carbon Nanotube Transistors Using Naphthalene Diimide-Based Polymers with Biaxially Extended Conjugated Side Chains.
Chen, Chun-Chi; Su, Shang-Wen; Tung, Yi-Hsuan; Wang, Po-Yuan; Yu, Sheng-Sheng; Chiu, Chi-Cheng; Shih, Chien-Chung; Lin, Yan-Cheng.
Afiliação
  • Chen CC; Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
  • Su SW; Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
  • Tung YH; Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
  • Wang PY; Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
  • Yu SS; Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
  • Chiu CC; Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
  • Shih CC; Department of Chemical Engineering and Materials Engineering, National Yunlin University of Science and Technology, Douliou, Yunlin 64002, Taiwan.
  • Lin YC; Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan.
ACS Appl Mater Interfaces ; 16(34): 45275-45288, 2024 Aug 28.
Article em En | MEDLINE | ID: mdl-39137092
ABSTRACT
Polymer-wrapped single-walled carbon nanotubes (SWNTs) are a potential method for obtaining high-purity semiconducting (sc) SWNT solutions. Conjugated polymers (CPs) can selectively sort sc-SWNTs with different chiralities, and the structure of the polymer side chains influences this sorting capability. While extensive research has been conducted on modifying the physical, optical, and electrical properties of CPs through side-chain modifications, the impact of these modifications on the sorting efficiency of sc-SWNTs remains underexplored. This study investigates the introduction of various conjugated side chains into naphthalene diimide-based CPs to create a biaxially extended conjugation pattern. The CP with a branched conjugated side chain (P3) exhibits reduced aggregation, resulting in improved wrapping ability and the formation of larger bundles of high-purity sc-SWNTs. Grazing incidence X-ray diffraction analysis confirms that the potential interaction between sc-SWNTs and CPs occurs through π-π stacking. The field-effect transistor device fabricated with P3/sc-SWNTs demonstrates exceptional performance, with a significantly enhanced hole mobility of 4.72 cm2 V-1 s-1 and high endurance/bias stability. These findings suggest that biaxially extended side-chain modification is a promising strategy for improving the sorting efficiency and performance of sc-SWNTs by using CPs. This achievement can facilitate the development of more efficient and stable electronic devices.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: Taiwan País de publicação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: Taiwan País de publicação: Estados Unidos