Study on the effects of strain and electrostatic doping on the magnetic anisotropy of GaN/VTe2van der Waals heterostructure.
Nanotechnology
; 2024 Oct 08.
Article
em En
| MEDLINE
| ID: mdl-39378893
ABSTRACT
Using a first-principles approach, this study delves into the effects of strain and electrostatic doping on the electronic and magnetic properties of the GaN/VTe2van der Waals heterostructure. The results reveal that when the GaN/VTe2van der Waals heterostructure is doped with 0.1h/0.2hof electrostatic charge, its magnetization direction undergoes a remarkable reversal, shifting from out-of-plane orientation to in-plane direction. Therefore, we conduct a thorough investigation into the influence of electron orbitals on magnetic anisotropy energy. In addition, as the strain changes from -1% to 1%, the 100% spin polarization region of the GaN/VTe2vdW heterostructure becomes smaller. It is worth noting that at a doping concentration of 0.1h, the GaN/VTe2vdW heterostructure has a Curie temperature of 30 K above room temperature. This comprehensive study provides valuable insights and provides a reference for analyzing the electronic and magnetic properties of low-dimensional systems.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
/
Nanotechnology (Bristol, Online)
/
Nanotechnology (Bristol. Online)
Ano de publicação:
2024
Tipo de documento:
Article
País de afiliação:
China
País de publicação:
Reino Unido