Ga2O3(Sn) Oxides for High-Temperature Gas Sensors.

Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga2O3 with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, adsorption sites, donor centers and, as a result, gas sensor properties. In this work, Ga2O3 and Ga2O3(Sn) samples with tin content of 0-13 at.% prepared by aqueous co-precipitation method were investigated by X-ray diffraction, nitrogen adsorption isotherms, X-ray photoelectron spectroscopy, infrared spectroscopy and probe molecule techniques. The introduction of tin leads to a decrease in the average crystallite size, increase in the temperature of ß-Ga2O3 formation. The sensor responses of all Ga2O3(Sn) samples to CO and NH3 have non-monotonous character depending on Sn content due to the following factors: the formation of donor centers and the change of free electron concentration, increase in reactive chemisorbed oxygen ions concentration, formation of metastable Ga2O3 phases and segregation of SnO2 on the surface of Ga2O3(Sn) grains.

The Key Role of Active Sites in the Development of Selective Metal Oxide Sensor Materials.

Development of sensor materials based on metal oxide semiconductors (MOS) for selective gas sensors is challenging for the tasks of air quality monitoring, early fire detection, gas leaks search, breath analysis, etc. An extensive range of sensor materials has been elaborated, but no consistent guidelines can be found for choosing a material composition targeting the selective detection of specific gases. Fundamental relations between material composition and sensing behavior have not been unambiguously established. In the present review, we summarize our recent works on the research of active sites and gas sensing behavior of n-type semiconductor metal oxides with different composition (simple oxides ZnO, In2O3, SnO2, WO3; mixed-metal oxides BaSnO3, Bi2WO6), and functionalized by catalytic noble metals (Ru, Pd, Au). The materials were variously characterized. The composition, metal-oxygen bonding, microstructure, active sites, sensing behavior, and interaction routes with gases (CO, NH3, SO2, VOC, NO2) were examined. The key role of active sites in determining the selectivity of sensor materials is substantiated. It was shown that the metal-oxygen bond energy of the MOS correlates with the surface acidity and the concentration of surface oxygen species and oxygen vacancies, which control the adsorption and redox conversion of analyte gas molecules. The effects of cations in mixed-metal oxides on the sensitivity and selectivity of BaSnO3 and Bi2WO6 to SO2 and VOCs, respectively, are rationalized. The determining role of catalytic noble metals in oxidation of reducing analyte gases and the impact of acid sites of MOS to gas adsorption are demonstrated.

Light Activation of Nanocrystalline Metal Oxides for Gas Sensing: Principles, Achievements, Challenges.

The review deals with issues related to the principle of operation of resistive semiconductor gas sensors and the use of light activation instead of thermal heating when detecting gases. Information on the photoelectric and optical properties of nanocrystalline oxides SnO2, ZnO, In2O3, and WO3, which are the most widely used sensitive materials for semiconductor gas sensors, is presented. The activation of the gas sensitivity of semiconductor materials by both UV and visible light is considered. When activated by UV light, the typical approaches for creating materials are (i) the use of individual metal oxides, (ii) chemical modification with nanoparticles of noble metals and their oxides, (iii) and the creation of nanocomposite materials based on metal oxides. In the case of visible light activation, the approaches used to enhance the photo- and gas sensitivity of wide-gap metal oxides are (i) doping; (ii) spectral sensitization using dyes, narrow-gap semiconductor particles, and quantum dots; and (iii) addition of plasmon nanoparticles. Next, approaches to the description of the mechanism of the sensor response of semiconductor sensors under the action of light are considered.

Effect of Humidity on Light-Activated NO and NO2 Gas Sensing by Hybrid Materials.

Air humidity is one of the main factors affecting the characteristics of semiconductor gas sensors, especially at low measurement temperatures. In this work we analyzed the influence of relative humidity on sensor properties of the hybrid materials based on the nanocrystalline SnO2 and In2O3 and Ru (II) heterocyclic complex and verified the possibility of using such materials for NO (0.25-4.0 ppm) and NO2 (0.05-1.0 ppm) detection in high humidity conditions (relative humidity (RH) = 20%, 40%, 65%, 90%) at room temperature during periodic blue (λmax = 470 nm) illumination. To reveal the reasons for the different influence of humidity on the sensors' sensitivity when detecting NO and NO2, electron paramagnetic resonance (EPR) spectroscopy and diffuse reflectance infrared Fourier transform spectroscopy (DRIFTS) investigations were undertaken. It was established that the substitution of adsorbed oxygen by water molecules causes the decrease in sensor response to NO in humid air. The influence of humidity on the interaction of sensitive materials with NO2 is determined by the following factors: the increase in charge carrier's concentration, the decrease in the number of active sites capable of interacting with gases, and possible substitution of chemisorbed oxygen with NO2- groups.

Electron injection effect in In2O3 and SnO2 nanocrystals modified by ruthenium heteroleptic complexes.

In this work, the optical characteristics and conductivity under photoactivation with visible light of hybrids based on nanocrystalline SnO2 or In2O3 semiconductor matrixes and heteroleptic Ru(ii) complexes were studied. The heteroleptic Ru(ii) complexes were prepared based on 1H-imidazo[4,5-f][1,10]phenanthroline and 2,2'-bipyridine ligands. Nanocrystalline semiconductor oxides were obtained by chemical precipitation with subsequent thermal annealing and characterized by XRD, SEM and single-point BET methods. The heteroleptic Ru(ii) complexes as well as hybrid materials were characterized by time-resolved luminescence and X-ray photoelectron spectroscopy. The results showed that the surface modification of SnO2 nanoparticles with heteroleptic ruthenium complexes led to an increase in conductivity upon irradiation with light appropriate for absorption by organometallic complexes. In the case of In2O3, the deposition of Ru(ii) complexes resulted in a decrease in conductivity, apparently due to the special structure of the surface layer of the semiconductor.

Synergy Effect of Au and SiO2 Modification on SnO2 Sensor Properties in VOCs Detection in Humid Air.

Nanocomposites based on Au- and SiO2-modified SnO2 were studied as sensitive materials for ethanol and benzene detection in dry (RH = 1%) and humid (RH = 20%) air. Modification of SnO2 by amorphous SiO2 (13 mol.%) was effectuated by hydrothermal synthesis; modification by Au nanoparticles (1 wt.%) was carried out via impregnation by citrate-stabilized Au sol. The composition of the samples was determined by X-ray fluorescent spectroscopy and energy-dispersive X-ray spectroscopy. The microstructure was characterized by XRD, HRTEM, and low-temperature nitrogen adsorption. The surface groups were investigated by XPS, TPR-H2, and FTIR spectroscopy. DRIFT spectroscopy was performed to investigate the interaction between ethanol and the surface of the synthesized materials. Studies of the sensor properties have shown that in all cases the most sensitive is the SnO2/SiO2-Au nanocomposite. This material retains high sensitivity even in a humid atmosphere. The obtained results are discussed in terms of the synergistic effect of two modifiers (Au and SiO2) in the formation of sensor properties of SnO2/SiO2-Au nanocomposites.

Electrospun ZnO/Pd Nanofibers: CO Sensing and Humidity Effect.

Variable air humidity affects the characteristics of semiconductor metal oxides, which complicates the reliable and reproducible determination of CO content in ambient air by resistive gas sensors. In this work, we determined the sensor properties of electrospun ZnO and ZnO/Pd nanofibers in the detection of CO in dry and humid air, and investigated the sensing mechanism. The microstructure of the samples, palladium content, and oxidation state, type, and concentration of surface groups were characterized using complementary techniques: X-ray fluorescent spectroscopy, XRD, high-resolution transmission electron microscopy (HRTEM), high angle annular dark field scanning transmission electron microscopy (HAADF-STEM), energy-dispersive X-ray (EDX) mapping, XPS, and FTIR spectroscopy. The sensor properties of ZnO and ZnO/Pd nanofibers were studied at 100-450 °C in the concentration range of 5-15 ppm CO in dry (RH25 = 0%) and humid (RH25 = 60%) air. It was found that under humid conditions, ZnO completely loses its sensitivity to CO, while ZnO/Pd retains a high sensor response. On the basis of in situ diffuse reflectance IR Fourier transform spectroscopy (DRIFTS) results, it was concluded that high sensor response of ZnO/Pd nanofibers in dry and humid air was due to the electronic sensitization effect, which was not influenced by humidity change.

Nanocomposites SnO2/SiO2:SiO2 Impact on the Active Centers and Conductivity Mechanism.

This paper is focused on the effect of the stabilizing component SiO2 on the type and concentration of active sites in SnO2/SiO2 nanocomposites compared with nanocrystalline SnO2. Previously, we found that SnO2/SiO2 nanocomposites show better sensor characteristics in CO detection (lower detection limit, higher sensor response, and shorter response time) compared to pure SnO2 in humid air conditions. Nanocomposites SnO2/SiO2 synthesized using the hydrothermal method were characterized by low temperature nitrogen adsorption, XRD, energy dispersive X-ray spectroscopy (EDX), thermo-programmed reduction with hydrogen (TPR-H2), IR-, and electron-paramagnetic resonance (EPR)-spectroscopy methods. The electrophysical properties of SnO2 and SnO2/SiO2 nanocomposites were studied depending on the oxygen partial pressure in the temperature range of 200-400 °C. The introduction of SiO2 results in an increase in the concentration of paramagnetic centers Sn3+ and the amount of surface hydroxyl groups and chemisorbed oxygen and leads to a decrease in the negative charge on chemisorbed oxygen species. The temperature dependences of the conductivity of SnO2 and SnO2/SiO2 nanocomposites are linearized in Mott coordinates, which may indicate the contribution of the hopping mechanism with a variable hopping distance over local states.

Quasi Similar Routes of NO2 and NO Sensing by Nanocrystalline WO3: Evidence by In Situ DRIFT Spectroscopy.

Tungsten oxide is a renowned material for resistive type gas sensors with high sensitivity to nitrogen oxides. Most studies have been focused on sensing applications of WO3 for the detection of NO2 and a sensing mechanism has been established. However, less is known about NO sensing routes. There is disagreement on whether NO is detected as an oxidizing or reducing gas, due to the ambivalent redox behavior of nitric oxide. In this work, nanocrystalline WO3 with different particle size was synthesized by aqueous deposition of tungstic acid and heat treatment. A high sensitivity to NO2 and NO and low cross-sensitivities to interfering gases were established by DC-resistance measurements of WO3 sensors. Both nitrogen oxides were detected as the oxidizing gases. Sensor signals increased with the decrease of WO3 particle size and had similar dependence on temperature and humidity. By means of in situ infrared (DRIFT) spectroscopy similar interaction routes of NO2 and NO with the surface of tungsten oxide were unveiled. Analysis of the effect of reaction conditions on sensor signals and infrared spectra led to the conclusion that the interaction of WO3 surface with NO was independent of gas-phase oxidation to NO2.

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites.

Increasing requirements for environmental protection have led to the need for the development of control systems for exhaust gases monitored directly at high temperatures in the range of 300-800 °C. The development of high-temperature gas sensors requires the creation of new materials that are stable under these conditions. The stability of nanostructured semiconductor oxides at high temperature can be enhanced by creating composites with highly dispersed silicon carbide (SiC). In this work, ZnO and SiC nanofibers were synthesized by electrospinning of polymer solutions followed by heat treatment, which is necessary for polymer removal and crystallization of semiconductor materials. ZnO/SiC nanocomposites (15-45 mol % SiC) were obtained by mixing the components in a single homogeneous paste with subsequent thermal annealing. The composition and microstructure of the materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The electrophysical and gas sensing properties of the materials were investigated by in situ conductivity measurements in the presence of the reducing gases CO and NH3 (20 ppm), in dry conditions (relative humidity at 25 °C RH25 = 0) and in humid air (RH25 = 30%) in the temperature range 400-550 °C. The ZnO/SiC nanocomposites were characterized by a higher concentration of chemisorbed oxygen, higher activation energy of conductivity, and higher sensor response towards CO and NH3 as compared with ZnO nanofibers. The obtained experimental results were interpreted in terms of the formation of an n-n heterojunction at the ZnO/SiC interface.